By R. M. Marston (Auth.)
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Extra info for 110 Semiconductor Projects for the Home Constructor
Fig. 2 . 5 b s h o w s h o w a p n p e m i t t e r follower, Q 3 , can be a d d e d t o I2V TO 20V + V e "OUT (A) GENERAL PURPOSE SILICON DIODES OV I5V TO 25V + V e (b) Fig. 7pF 42 15 FIELD-EFFECT TRANSISTOR PROJECTS the above circuit, enaoling an o u t p u t t o be t a k e n directly t o a l o w i m p e d a n c e e x t e r n a l l o a d via C . In a d d i t i o n , this particular circuit in3 c o r p o r a t e s modifications t h a t r e d u c e t h e effective s h u n t c a p a c i t a n c e of t h e i n p u t i m p e d a n c e , a n d so enables an i m p r o v e d high f r e q u e n c y p e r f o r m a n c e t o be o b t a i n e d .
Q3 h a s 2 near-unity c u r r e n t gain b e t w e e n e m i t t e r a n d collector, so t h e signal c u r r e n t s flowing in R a n d in t h e drain of Ql are virtually identical; 2 46 15 FIELD-EFFECT TRANSISTOR PROJECTS c o n s e q u e n t l y , reasonable voltage gain ( a b o u t 21 dB) o c c u r s b e t w e e n Ql gate a n d Q3 collector. T o p r e v e n t e x t e r n a l circuits w i t h fairly large values of s h u n t i n p u t capacitance reducing t h e effective value of R 2 ( a n d t h u s t h e amplifier's voltage gain) a t high frequencies, t h e o u t p u t of t h e circuit is t a k e n from Q3 collector via g 4 , w h i c h is w i r e d as an e m i t t e r follower.
8 shows an alternative version of t h e c o m m o n source amplifier, in w h i c h t h e i n p u t s h u n t capacitance is substantially r e d u c e d ( t o a b o u t 12 p F ) , t h u s giving an increased i n p u t i m p e d a n c e at high frequencies ( a b o u t 120 kSl at 1 0 0 k H z ) . T h i s circuit uses a variety of transistor o p e r a t i n g m o d e s ( c o m m o n source, c o m m o n b a s e , and c o m m o n c o l l e c t o r ) , a n d is t h e r e f o r e k n o w n as a ' c o m p o u n d amplifier'.
110 Semiconductor Projects for the Home Constructor by R. M. Marston (Auth.)